I-GE IS200EHPAG1DAB GATE PULSE AMPLIFER
Ulwazi olujwayelekile
| Ukukhiqiza | GE | 
| Into No | Idatha ye-IS200EHPAG1DAB | 
| Inombolo ye-athikili | Idatha ye-IS200EHPAG1DAB | 
| Uchungechunge | Mark VI | 
| Umsuka | I-United States (US) | 
| Ubukhulu | 180*180*30(mm) | 
| Isisindo | 0.8 kg | 
| Inombolo Yentela Yamasiko | 85389091 | 
| Uhlobo | I-Gate Pulse Amplifier | 
Idatha enemininingwane
I-GE IS200EHPAG1DAB Gate Pulse Amplifier
I-IS200EHPAG1DAB iyingxenye yochungechunge lwe-GE EX21000 Gate Pulse Amplifiers. Ibhodi le-IS200EHPAG1DAB (kumasistimu angu-100mm) lixhumanisa isilawuli ku-Power Bridge. I-IS200EHPAG1DAB ithatha imiyalo yesango ebhodini le-ESEL kusilawuli, futhi ikhiqize ama-pulses okudubula amasango ama-SCR ayisithupha (Silicon ControlledRectifiers). Futhi iyisixhumi esibonakalayo sempendulo yamanje yokuqhuba, kanye nokugeleza komoya kwebhuloho nokuqapha izinga lokushisa.
I-RTD isetshenziselwa ukuqapha izinga lokushisa lebhuloho futhi ikhiqize ama-alamu. Izinzwa ezengeziwe eziqhutshwa ukuzungezisa abalandeli ziqapha ukupholisa ukugeleza komoya kulo lonke ibhuloho. Ezilawulweni ze-anexciter kuphela i-retrofit, i-exciter ingase ibe nezinhlinzeko zokwamukela impendulo evela kumaswishi amabili ashisayo afakwe kumhlangano we-SCR heatsink. I-thermalswitch eyodwa ivula kuleveli ye-alamu (170 °F (76°C)) kanti enye ileveli yohambo (190 °F(87°C)). Lawa maswishi anezintambo ebhodini le-EGPA futhi angase adinge ukufakwa kabusha ebhulohweni elikhona. Uma enye iswishi ivuleka, kukhiqizwa i-alamu yokushisa ngokweqile kwebhuloho. Uma womabili amaswishi evuleka, iphutha nohambo luyakhiqizwa.
 
 		     			 
 				

 
 							 
              
              
             